The GJL40B Crystal Growth Furnace is primarily used for the crystal growth of semiconductor materials. By precisely controlling temperature, atmosphere, and mechanical motion, it enables the growth of high-quality single crystals. This equipment plays a crucial role in the semiconductor industry and is one of the key devices for manufacturing high-performance semiconductor components.
The GJL40B Crystal Growth Furnace features a sophisticated structural design, consisting mainly of the furnace body, heating system, vacuum system, atmosphere control system, mechanical motion mechanism, and control system. These components work in coordination to ensure stability and controllability throughout the crystal growth process.
Furnace Body: Constructed from high-strength, corrosion-resistant materials capable of withstanding prolonged operation under high temperatures and vacuum conditions.
Heating System: Utilizes advanced heating technology and materials to provide a stable and uniform heating environment, ensuring optimal temperature conditions for crystal growth.
Vacuum System: Equipped with efficient vacuum pumping and pressure retention capabilities to maintain the required vacuum environment for crystal growth.
Atmosphere Control System: Precisely regulates the composition and pressure of the furnace atmosphere to meet the requirements of different crystal growth processes.
For further technical support or service, please contact our customer service department.
If you require an official product manual, please contact us for purchase.
