8inch/6inch/5inch/ 2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6″/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thicknessdiameter300mm 12inch Al2O3 Sapphire wafers carrier with notch SSP DSP 1.0mm C – Axis sapphire optical glass windows
About synthetic sapphire crystal
Sapphire Properties
| GENERAL | |||||
| Chemical Formula | Al2O3 | ||||
| Crystal Stucture | Hexagonal System ((hk o 1) | ||||
| Unit Cell Dimension | a=4.758 Å,Å c=12.991 Å, c:a=2.730 | ||||
| PHYSICAL | |||||
| Metric | English (Imperial) | ||||
| Density | 3.98 g/cc | 0.144 lb/in3 | |||
| Hardness | 1525 – 2000 Knoop, 9 mhos | 3700° F | |||
| Melting Point | 2310 K (2040° C) | ||||
| STRUCTURAL | |||||
| Tensile Strength | 275 MPa to 400 MPa | 40,000 to 58,000 psi | |||
| at 20° | 400 MPa | 58,000 psi (design min.) | |||
| at 500° C | 275 MPa | 40,000 psi (design min.) | |||
| at 1000° C | 355 MPa | 52,000 psi (design min.) | |||
| Flexural Stength | 480 MPa to 895 MPa | 70,000 to 130,000 psi | |||
| Compression Strength | 2.0 GPa (ultimate) | 300,000 psi (ultimate) | |||
The Kyropoulos process (KY process) for sapphire crystal growth is currently used by many companies in China to produce sapphire for the electronics and optics industries.
High-purity, aluminum oxide is melted in a crucible at over 2100 degrees Celsius. Typically the crucible is made of tungsten or molybdenum. A precisely oriented seed crystal is dipped into the molten alumina. The seed crystal is slowly pulled upwards and may be rotated simultaneously. By precisely controlling the temperature gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, roughly cylindrical ingot from the melt.
After single crystal sapphire boules are grown, they are core-drilled into cylindrical rods, The rods are sliced up into the desired window thickness and finally polished to the desired surface finish.
Use as substrate for semiconducting circuits
Thin sapphire wafers were the first successful use of an insulating substrate upon which to deposit silicon to make the integrated circuits known as silicon on sapphire or “SOS”, Besides its excellent electrical insulating properties, sapphire has high thermal conductivity. CMOS chips on sapphire are especially useful for high-power radio-frequency (RF) applications such as those found in cellular telephones, public-safety band radios, and satellite communication systems.
Wafers of single-crystal sapphire are also used in the semiconductor industry as substrates for the growth of devices based on gallium nitride (GaN). The use of sapphire significantly reduces the cost, because it has about one-seventh the cost of germanium. Gallium nitride on sapphire is commonly used in blue light-emitting diodes (LEDs).
Used as a window material
Synthetic sapphire (sometimes referred to as sapphire glass) is commonly used as a window material, because it is both highly transparent to wavelengths of light between 150 nm (UV) and 5500 nm (IR) (the visible spectrum extends about 380 nm to 750 nm, and extraordinarily scratch-resistant. The key benefits of sapphire windows are:
* Very wide optical transmission band from UV to near-infrared
* Significantly stronger than other optical materials or glass windows
* Highly resistant to scratching and abrasion (9 on the Mohs scale of mineral hardness scale, the 3rd hardest natural substance next to moissanite and diamonds)
* Extremely high melting temperature (2030 °C)
50.8mm 2inch GaN on sapphire Epi-layer wafer KY and EFG Sapphire Method Tube sapphire rods pipe high-pressure Customized Size 8 inch sapphire wafer substrate
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Q: What’s the deliver time?
(1) For inventory: the delivery time is 5 workdays.
(2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.
Q: Can I customize the products based on my need?
Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.
