Germanium chips have semiconductor properties. Has played an important role in the development of solid state physics and solid state electronics. Germanium has a melting density of 5.32g/cm 3, germanium may be classified as a thin scattered metal, germanium chemical stability, does not interact with air or water vapor at room temperature, but at 600 ~ 700℃, germanium dioxide is quickly generated. Does not work with hydrochloric acid, dilute sulfuric acid. When concentrated sulfuric acid is heated, germanium will slowly dissolve. In nitric acid and aqua regia, germanium is easily dissolved. The effect of alkali solution on germanium is very weak, but molten alkali in air can make germanium dissolve quickly. Germanium does not work with carbon, so it is melted in a graphite crucible and will not be contaminated by carbon. Germanium has good semiconductor properties, such as electron mobility, hole mobility and so on. The development of germanium still has great potential.
| Growth method | CZ | ||
| crystal instuture | Cubic system | ||
| Lattice constant | a=5.65754 Å | ||
| Density | 5.323g/cm3 | ||
| Melting point | 937.4℃ | ||
| Doping | Un-doping | Doping-Sb | Doping-Ga |
| Type | / |
N |
P |
| resistence | ＞35Ωcm | 0.01~35 Ωcm | 0.05~35 Ωcm |
| EPD | ＜4×103∕cm2 | ＜4×103∕cm2 | ＜4×103∕cm2 |
| Diameter | 2inch/50.8 mm | ||
| Thickness | 0.5mm，1.0mm | ||
| Surface | DSP and SSP | ||
| Orientation | <100>、<110>、<111>、±0.5º | ||
| Ra | ≤5Å（5µm×5µm） | ||
| Package | 100 grade package ，1000 grade room | ||
Customized Size 8 inch sapphire wafer substrate 12 inch Dia300x1.0mmt Sapphire Wafer Substrate C-Plane SSP/DSP 2 inch 3 inch 4 inch Square Cassette carrier Box for 2 inch 4 inch square wafer substrates
