ithium niobate crystals have excellent electro-optic, acoustooptic, piezoelectric and nonlinear properties. Lithium niobate crystal is an important multifunctional crystal with good nonlinear optical properties and large nonlinear optical coefficient. Moreover, non-critical phase matching can be realized. As an electro-optical crystal, it has been used as an important optical waveguide material. As a piezoelectric crystal, it can be used in the production of low frequency SAW filters, high power high temperature resistant ultrasonic transducers and so on. Doped lithium niobate materials are also widely used. Mg:LN can greatly improve the anti-laser damage threshold, and promote the application of lithium niobate crystals in the field of nonlinear optics. Nd:Mg:LN crystal, can achieve self-doubling effect; Fe:LN crystals can be used for holographic storage in optical volumes.
Cubic system | 3m |
Lattice constant | aH = 5.151Å,cH = 13.866 Å |
Melting point (℃) | 1250℃ |
Curie temperature | 1142.3 ±0.7°C |
Density(g/cm3) | 4.65 |
Mechanical hardness | 5(Mohs) |
Piezoelectric strain coefficient(@25℃x10-12C/N) | d15=69.2,d22=20.8,d31=-0.85,d33=6.0 |
Nonlinear optical coefficient(pm/V@1.06µm) | d22=3,d31=-5,d33=-33 |
Electro-optical coefficient(pm/V@633nm@clamped) | γ13=9,γ22=3,γ33=31,γ51=28,γZ=19 |
Pyroelectric coefficient(@25℃) | -8.3 x 10-5C/°C/m2 |
Coefficient of thermal expansion(@25℃) | αa=15×10-6/°C,αc =7.5×10-6/°C |
Thermal conductivity(@25°C) | 10-2 cal/cm•sec•°C |
Diameter | Ø76.2mm | Ø100mm |
Length | ≤150mm | ≤100mm |
Orientation | 127.86°Y、64°Y、X、Y、Z,or others |
Diameter | Ø76.2mm | Ø100mm |
Thickness | 0.25mm>= | 0.25mm>= |
Orientation | 127.86°Y、64°Y、X、Y、Z,or others | |
Major flatness oritation |
X、Y、Z,or others |
|
Major faltness width |
22±2mm or others |
|
S/D | 10/5 | |
TTV | <10um |
Ingots and wafers of the required lithium niobate (LiNbO3) sizes and specifications are available upon special request
12 inch Dia300x1.0mmt Sapphire Wafer Substrate C-Plane SSP/DSP 4 inch Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm 200mm 8inch GaN on sapphire Epi-layer wafer substrate