|

What products do we offer?

We are Guizhou Huoying Technology Co., Ltd., from Guizhou, China. We provide silicon carbide wafers, sapphire wafers, special glass, epitaxial wafers, YAG laser wafers, YSZ single crystals, silicon wafers, etc. to global customers.

SOI Wafer Silicon On Insulator Semiconductor Wafer

c23f4f72cdd86647a6968194f2754c5 1
76 / 100 SEO Score

What is SOI Wafer ?

A SOI (Silicon-On-Insulator) wafer is a type of semiconductor wafer used in the manufacturing of integrated circuits (ICs). It is characterized by a layered structure consisting of a thin layer of silicon (the active layer) on top of an insulating layer, which is usually made of silicon dioxide (SiO2). The insulating layer, also known as the buried oxide (BOX), separates the active layer from the underlying silicon substrate. The purpose of using an SOI wafer is to improve the performance and power efficiency of ICs. The insulating layer reduces parasitic capacitance and leakage currents, thereby enhancing the speed and reducing the power consumption of the devices fabricated on the wafer. Additionally, the SOI structure helps to minimize the interference between neighboring transistors, leading to better isolation and reduced crosstalk.
Specification
item
value
Place of Origin
China
Shanghai
Brand Name
HuoYing
Model Number
Hy
Type
SOI wafer
Model Number
Silicon wafer
Type
SIO Wafer
Method
Fusion bonding
Device Thickness
2-300 um
Tolerance
+/-0.5 um-2 um
Orientation
100/111/110 or others
Conductivity
P-type / N-type / Intrinsic
Resistivity
0.001-100000 ohm-cm
Dopant
Boron / Phosphorous / Antimony / Arsenic
Oxide Thickness
500A-4 um

c23f4f72cdd86647a6968194f2754c5 1

SOI wafers are offered with great customizability and the parameters are greatly flexible as per your needs.
H8b4ab0d85f3c4d5ab17333bfb4656b78O
Product Application
The purpose of using an SOI wafer is to improve the performance and power efficiency of ICs. The insulating layer reduces parasitic capacitance and leakage currents, thereby enhancing the speed and reducing the power consumption of the devices fabricated on the wafer. Additionally, the SOI structure helps to minimize the interference between neighboring transistors, leading to better isolation and reduced crosstalk. SOI technology offers several advantages over traditional bulk silicon wafers. It enables the fabrication of high-performance devices, such as microprocessors, memory chips, and RF (radio frequency) circuits. SOI wafers are particularly advantageous for applications that require low power consumption, high-speed operation, and excellent isolation between components.
H35fb282470fe4ed8a217317352e5d6070
H91579874076348c3a1f2b6b8cd2182e5J
 

>> High speed integrated circuit >> High speed integrated circuit >> High speed integrated circuit >> Low Voltage Integrated Circuits

 
 

>> Microwave Devices >> Power Devices >> MEMS

Categories: