
The Kyropoulos process (KY process) for sapphire crystal growth is currently used by many companies in China to produce sapphire for the electronics and optics industries.
desired window thickness and finally polished to the desired surface finish.

General
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Chemical Formula
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AL2O3
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Crystal Structure
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Hexagonal System (kh o 1)
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Unit Cell Dimension
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a=4.758 A,A c=12.991 A,c:a=2.730
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Physical
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Metric
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English (Imperial)
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Density
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3.98 g/cc
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0.144 lb/in3
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Hardness
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1525-2000 Knoop, 9 moh’s
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3700 F
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Melting Point
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2310 K (2040 ℃)
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Structure
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Tensile Strength (20 ℃)
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400 MPa
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58000 psi (design min.)
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Tensile Strength (500 ℃)
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275 MPa
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40000 psi (design min.)
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Tensile Strength (1000 ℃)
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355 MPa
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52000 psi (design min.)
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Flexural Strength
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480-895 MPa
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70000-130000 psi
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Compression Strength
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2.0 GPa (ultimate)
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300000 psi (u;timate)
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Application of Sapphire Wafer
* Very wide optical transmission band from UV to near-infrared
* Significantly stronger than other optical materials or glass windows
* Highly resistant to scratching and abrasion (9 on the Mohs scale of mineral hardness scale, the 3rd hardest natural substance next to moissanite and diamonds)
* Extremely high melting temperature (2030 °C)
