| Properties | Specification | Unit | ||||
| Z | P | R | D | |||
| Diameter | 150± 0.25 | mm | ||||
| Thickness | 350(-25, 25) | µm | ||||
| Surface off-orientation | 4.0° towards [11-20]± 0.5° | |||||
| Primary flat location | Perpendicular to the [11-20]± 5° | |||||
| Primary flat length | 47.5 ± 1.5 | mm | ||||
| Edge Exclusion | 3 | mm | ||||
| Warp | ≤ 25 | ≤ 35 | ≤ 45 | ≤ 60 | µm | |
| Bow | ± 10 | ± 15 | ± 25 | ± 40 | µm | |
| TTV | ≤ 5 | ≤ 8 | ≤ 10 | ≤ 15 | µm | |
| Dislocation Density-EPD | ≤ 4000 | ≤ 6000 | ≤ 8000 | ≤ 12000 | No
requirements |
/cm2 |
| Dislocation Density-TSD | ≤ 200 | ≤ 300 | ≤ 500 | ≤ 800 | /cm2 | |
| Dislocation Density-BPD | ≤ 800 | ≤ 1000 | ≤ 1500 | ≤ 2000 | /cm2 | |
| Micropipe Density | ≤ 0.2 | ≤ 0.2 | ≤ 0.5 | ≤ 1 | /cm2 | |
| Polytype by high intensity
light |
4H 100% | 4H 98% | 4H 97% | % area | ||
| Hexagon by high intensity
light |
None | ≤1% | ≤3% | % area | ||
| Resistivity | 0.015-0.025 | 0.015-0.028 | 0.010-0.030 | Ω·cm | ||
| Surface roughness（ Si face） | < 0.2 | nm | ||||
| Surface roughness（ C face） | < 1 | < 2 | nm | |||
| Cracks by high intensity light | none | |||||
| Si surface scratches by high intensity light | none | ≤3ea ，each ≤ 10mm | ||||
| Cumulative scratches length
(By 8520) |
≤ 75 | ≤ 100 | ≤150 | No requirements | mm | |
| Edge chip | none | |||||
| Edge Profile | SEMI M55-0817 | |||||
| Stains by high intensity light | none | |||||
| Residual Metals
Contamination (Al, Cr, Fe, Ni, Cu, K, Ti &Mn) |
< 5E10 | < 1E11 | ||||
| Packaging | Multi-wafer Cassette/Single-wafer box | |||||
