PRODUCTS DETAILS
● Growth substrate for III-V and II-VI compounds. ● Electronics and optoelectronics. ● IR applications. ● Silicon On Sapphire Integrated Circuit(SOS). ● Radio Frequency Integrated Circuit(RFIC). In LED production, sapphire wafers are used as a substrate for the growth of gallium nitride (GaN) crystals, which emit light when an electric current is applied. Sapphire is an ideal substrate material for GaN growth because it has a similar crystal structure and thermal expansion coefficient to GaN, which minimizes defects and improves crystal quality. In optics, sapphire wafers are used as windows and lenses in high-pressure and high-temperature environments, as well as in infrared imaging systems, because of their high transparency and hardness.
| Item | 4-inch C-plane(0001) 650μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | C-plane(0001) | |
| C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
| Diameter | 100.0 mm +/- 0.1 mm | |
| Thickness | 650 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 30.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| TTV | < 20 μm | |
| BOW | < 20 μm | |
| WARP | < 20 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, | |
| 25 pieces in one cassette packaging or single piece packaging. | ||
Generally speaking, we provide the package by 25pcs cassette box; we also can packed by single wafer container under 100 grade cleaning room according to the client’s requirement.
