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12 inch SIC substrate silicon carbide prime grade diameter 300mm large size 4H-N Suitable for high power device heat dissipation
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4-inch Silicon Carbide Wafers 4H-SiC N-Type or Semi-Insulating SiC Substrates
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Prime silicon wafer for semiconductor Solar Cells P type N type,2 to 12inch
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Comprehensive Comparison of Smart Cut and SIMOX in SOI Wafer Fabrication: Process Parameters and Applications
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Comprehensive Comparison of SOI Insulated Silicon Wafers vs. Traditional Bulk Silicon Wafers: Key Process Parameter Differences
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4H-SiC Powder: The Core Foundation of Third-Generation Semiconductor Materials and Industrial Innovation
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Comparative Analysis of Cost Structures: SOI Wafers vs. Bulk Silicon Wafers
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Single-Crystal Silicon Wafers: The Foundation of Modern Electronics
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The different between 4H-SEMI sic substrate and 4H-N sic substrate
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