Description of SIC Wafer
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | no = 2.61
ne = 2.66 |
no = 2.60
ne = 2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K |
|
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K |
a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
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Catalog Commen Size
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4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots |
4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
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6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot |
Customzied size for 2-6inch
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12inch dia 300mm C-aixs Al2O3 Sapphire Wafer double side polished DSP 2inch 50.8mm Germanium Wafer Substrate Single crystal 1SP 2SP 6inch 150mm Silicon Carbide SiC Wafers 4H-N type for MOS or SBD Production Research and Dummy grade P Grade 8inch N type SiC substrate for semiconductor for Unmatched Semiconductor
